Typical Characteristics T C = 25°C unless otherwise noted
1.2
1.0
0.8
0.6
0.4
0.2
0
75
50
25
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
T C , CASE TEMPERATURE ( o C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
0.5
0.2
0.1
0.05
0.02
0.01
P DM
0.1
t 1
t 2
NOTES:
0.01
SINGLE PULSE
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
175 - T C
150
V GS = 10V
100
50
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
?200 8 Fairchild Semiconductor Corporation
3
FDB3652 _F085 Rev. A 1
相关PDF资料
FDB3672_F085 MOSFET N-CH 100V 44A D2PAK
FDB3860 MOSFET N-CH 100V 6.4A D2PAK
FDB390N15A MOSFET N-CH 150V 27A D2PAK
FDB44N25TM MOSFET N-CH 250V 44A D2PAK
FDB52N20TM MOSFET N-CH 200V 52A D2PAK
FDB5800_F085 MOSFET N-CH 60V 80A D2PAK
FDB6030L MOSFET N-CH 30V 48A D2PAK
FDB6670AL MOSFET N-CH 30V 80A D2PAK
相关代理商/技术参数
FDB3652_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3652SB82059 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDB3672 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3672_09 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 44A, 28m??
FDB3672_F085 功能描述:MOSFET 100V 44A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3682 功能描述:MOSFET 100V N-Channel Pwr Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-37PF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDB-37SF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE